摘要An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96×10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.
Abstract：An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96×10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.
YANG Chun-Xiao;ZHANG Chi;SUN Qing-Qing;XU Sai-Sheng;ZHANG Li-Feng;SHI Yu;DING Shi-Jin;ZHANG Wei. Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition[J]. 中国物理快报, 2010, 27(2): 27701-027701.
YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing, XU Sai-Sheng, ZHANG Li-Feng, SHI Yu, DING Shi-Jin, ZHANG Wei. Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition. Chin. Phys. Lett., 2010, 27(2): 27701-027701.
[1] International Technology Roadmap for Semiconductors 2007 www.itrs.net [2] Yin G Q et al 2007 Chin. Phys. Lett. 24 3532 [3] Ciaramella F et al 2006 Thin Solid Films 495 124 [4] Tada M et al 2007 J. Electrochem. Soc. 154 D354 [5] He Z W et al 2008 Micropor. Mesopor. Mater. 111 206 [6] Jousseaume V et al 2007 Surf. Coatings Technol. 201 9248 [7] Ding S J et al 2000 Chin. Phys. 9 778 [8] Widodo J et al 2005 J. Electrochem. Soc. 152 G246 [9] Ross a D and Gleason K K 2005 J. Appl. Phys. 97 6 [10] Ye C et al 2005 Chin. Phys. Lett. 22 2670 [11] Grill A and Neumayer D A 2003 J. Appl. Phys. 94 6697 [12] Navamathavan R et al 2007 Appl. Surf. Sci. 253 8788 [13] Kim C Y et al 2007 Thin Solid Films 516 340 [14] Shioya Y et al 2008 J. Non-Cryst. Solids 354 2973 [15] Heo J et al 2007 Thin Solid Films 515 5035 [16] Lide D R 2006 CRC Handbook of Chemistry and Physics 87th edn (Boca Raton FL.: Taylor and Francis) p 9-87 [17] Luo J T et al 2007 Thin Solid Films 515 7275 [18] Oliver W C and Pharr G M 1992 J. Mater. Res. 7 1564 [19] Iacopi F et al 2006 J. Appl. Phys. 99 053511
2010, Vol. 27 
