Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films
ZHU Yan-Yan1,2 , FANG Ze-Bo1** , TAN Yong-Sheng1
1 Department of Physics, Shaoxing University, Shaoxing 312000 2 Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090
Abstract ：Ultrathin high-k dielectric ErAlO films were deposited on Si (100) substrates by using radio-frequency magnetron sputtering. The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed by using an atomic force microscope. The film shows good thermal stability when annealing at 900°C for 30 s in the O2 ambient. The effective dielectric constant of the film is around 15.2, and a low leakage current of 8.4×10?5 A/cm2 at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.
收稿日期: 2012-03-01
出版日期: 2012-07-31
[1] Chain C Y, Damonte L C, Ferrari S et al 2010 J. Alloys Compd. 495 527 2006 Appl. Phys. Lett. 88 162909 2001 Appl. Phys. Lett. 78 1832 2011 Acta Mater. 59 1644 2006 Appl. Phys. Lett. 88 222902 2004 J. Alloys Compd. 374 124 2009 Chin. Phys. B 18 1674 2011 Appl. Phys. A 102 695 2010 J. Electrochem. Soc. 157 G193 2006 Appl. Phys. Lett. 88 222912 2007 Appl. Phys. Lett. 91 091914 2007 J. Appl. Phys. 101 064106 2002 IEEE Electron Device Lett. 23 649 Acta Phys. Sin. 57 6604 (in Chinese)2006 J. Sol-Gel Sci. Technol. 39 307 2011 J. Appl. Phys. 109 113107 2003 J. Appl. Phys. 94 3403 2005 J. Cryst. Growth 277 496 2007 Appl. Phys. Lett. 90 222906 2003 Appl. Phys. Lett. 83 2889
[1]
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[2]
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[3]
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[4]
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[5]
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2012, Vol. 29 
