Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods
WANG Dong-Sheng1, ZHANG Ke-Xiong1, LIANG Hong-Wei1,2**, SONG Shi-Wei1, YANG De-Chao3, SHEN Ren-Sheng1, LIU Yang1, XIA Xiao-Chuan1, LUO Ying-Min1, DU Guo-Tong1,3
1School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012
Abstract：Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.
. [J]. 中国物理快报, 2014, 31(2): 27101-027101.
WANG Dong-Sheng, ZHANG Ke-Xiong, LIANG Hong-Wei, SONG Shi-Wei, YANG De-Chao, SHEN Ren-Sheng, LIU Yang, XIA Xiao-Chuan, LUO Ying-Min, DU Guo-Tong. Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods. Chin. Phys. Lett., 2014, 31(2): 27101-027101.
2014, Vol. 31 
