Phonon-Limited Electron Mobility in Single-Layer MoS2
ZENG Lang1**, XIN Zheng1, CHEN Shao-Wen2, DU Gang1, KANG Jin-Feng1, LIU Xiao-Yan1**
1Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 2Yuanpei College, Peking University, Beijing 100871
Abstract：The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Fr?hlich scattering are taken into account. It is found that the electron mobility decreases from 806 cm2/V?s for a transverse electrical field of 103 V/m to 426/112 cm2/V?s for a transverse electrical field of 105/107 V/m. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.
2014, Vol. 31 
