Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a -Plane GaN Grown on r-Sapphire Substrates
JIANG Ren-Yuan, XU Sheng-Rui** , ZHANG Jin-Cheng, JIANG Teng, JIANG Hai-Qing, WANG Zhi-Zhe, FAN Yong-Xiang, HAO Yue
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：Effects of the growth temperature on morphological and microstructural evolution of a -plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy (SIMS). Surface morphology, structural quality and related impurity incorporation are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has significantly higher concentrations of oxygen than the other sample with pentagon-like pit morphology, which is induced by the existence of an N-face in triangular pits.
收稿日期: 2015-04-28
出版日期: 2015-10-02
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.10.Aj
(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
71.55.Eq
(III-V semiconductors)
78.55.Ap
(Elemental semiconductors)
引用本文:
. [J]. 中国物理快报, 2015, 32(09): 98102-098102.
a -Plane GaN Grown on r-Sapphire Substrates. Chin. Phys. Lett., 2015, 32(09): 98102-098102.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/9/098102
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I09/98102
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2015, Vol. 32 
