Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures
ZHOU Shu-Xing1, QI Ming1**, AI Li-Kun1, XU An-Huai1, WANG Li-Dan2, DING Peng2, JIN Zhi2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Abstract：The InGaAs/InAlAs/InP high electron mobility transistor (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si δ-doping concentration (Nd) is about 5.0×1012 cm?2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT=249 GHz and fmax>400 GHz.
. [J]. 中国物理快报, 2015, 32(09): 97101-097101.
ZHOU Shu-Xing, QI Ming, AI Li-Kun, XU An-Huai, WANG Li-Dan, DING Peng, JIN Zhi. Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures. Chin. Phys. Lett., 2015, 32(09): 97101-097101.
2015, Vol. 32 
