摘要By introducing multi-leaf sectorial holes into an oxidation confined 850 nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced. The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R. Based on the simulation result, we design and fabricate a multi−leaf holey VCSEL and its divergence angle is only 6°. The experimental results agree well with the theoretical predication.
Abstract：By introducing multi-leaf sectorial holes into an oxidation confined 850 nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced. The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R. Based on the simulation result, we design and fabricate a multi−leaf holey VCSEL and its divergence angle is only 6°. The experimental results agree well with the theoretical predication.
[1] Weigl B, Grabherr M, Michalzik R, Reiner G and Ebeling K J 1996 IEEE Photon. Technol. Lett. 8 971
[2] Lear K L, Schneider R P, Choquette K D and Kilcoyne S P 1996 IEEE Photon. Technol. Lett. 8 740
[3] Oh T H, Huffaker D L and Deppe D G 1996 Appl. Phys. Lett. 69 3152
[4] Hegarty S P, Huyet G, McInerney J G, Choquette K D, Geib K M and Hou H Q 1998 Appl. Phys. Lett. 73 596
[5] Haglund J S, Gustavsson and Vukusic J 2004 IEEE Photon. Technol. Lett. 16 368
[6] Zhou D L and Mawst L J 2002 IEEE J. Quantum Electron. 38 1599
[7] Danner A J, Raftery J J, Yokouchi N and Choquette K D 2004 Appl. Phys. Lett. 84 1031
[8] Furukawa A, Hoshi M and Sasaki S 2005 Proc. SPIE 5722
[9] Liu A J, Chen W, Qu H W, Jiang B and Zheng W H 2009 Laser Phys. Lett. 7 213
[10] Raftery J J 2005 PhD Dissertation (Urbana-Champaign: University of Illinois)
[11] Xie Y Y, Xu C, Kan Q and Shen G D 2010 Chin. Phys. Lett. 27 024206
[12] Liu A J, Xing M X, Qu H W, Chen W, Zhou W J and Zheng W H 2009 Appl. Phys. Lett. 94 191105
2011, Vol. 28 
