1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024 3Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Straße 9-11, D-57076 Siegen, Germany
Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024 3Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Straße 9-11, D-57076 Siegen, Germany
摘要Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm. The results show that the properties of the films are strongly dependent on N2 flux.
Abstract：Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm. The results show that the properties of the films are strongly dependent on N2 flux.
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2011, Vol. 28 
