摘要Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA=0.3190nm, cA=0.5184nm and aB=0.3192nm, cB=0.5179nm), the crystal quality of two GaN epilayers ( Xmin A}=4.87%, Xmin B=7.35% along <1213> axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.
Abstract:Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA=0.3190nm, cA=0.5184nm and aB=0.3192nm, cB=0.5179nm), the crystal quality of two GaN epilayers ( Xmin A}=4.87%, Xmin B=7.35% along <1213> axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.
DING Zhi-Bo;WANG Kun;YAO Shu-De. A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling[J]. 中国物理快报, 2008, 25(3): 1131-1134.
DING Zhi-Bo, WANG Kun, YAO Shu-De. A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling. Chin. Phys. Lett., 2008, 25(3): 1131-1134.
[1] Nakamura S and Fasol G 1997 The Blue Laser Diode-GaNBased Light Emitter and Lasers (Berlin: Springer) [2] Ponce F A and Bour D P 1997 Nature 386 351 [3] Zhou J and Zhang G Y 2002 Chin. Phys. Lett. 19707 [4] Nikishin S A et al 1999 Appl. Phys. Lett. 752073 [5] Blasing J et al 2002 Appl. Phys. Lett. 81 2722 [6] Waldrip K E et al 2001 Appl. Phys. Lett. 783205 [7] Raghavan S and Redwing J M 2004 J. Appl. Phys. 96 2995 [8] Feng Z C et al 2002 Thin Solid Films 409 15 [9] Kaganer V M et al 1997 Phys. Rev. B 55 1793 [10] Qadri S B and Dinan J H 1985 Appl. Phys. Lett. 47 1066 [11] Zhou S Q et al 2005 Chin. Phys. Lett. 22 3190 [12]. Pereira S et al 2002 Appl. Phys. Lett. 803913 [13] Angerer H et al 1997 Appl. Phys. Lett. 711504 [14] Srinivasan S et al 2001 Phys. Status Solidi B 228 41 [15] Wu M F, Vantomme A, Hogg S M and Langouche G 1999 Appl. Phys. Lett. 74 366 [16] Wu M F, Chen C C, Zhu D Z, Zhou S Q, Vantomme A,Langouche G, Zhang B S and Yang H 2002 Appl. Phys. Lett. 80 4130 [17] Kim M H, Do Y G, Kang H C, Noh D and Park S J 2001 Appl. Phys. Lett. 79 2713