摘要Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA=0.3190nm, cA=0.5184nm and aB=0.3192nm, cB=0.5179nm), the crystal quality of two GaN epilayers ( Xmin A}=4.87%, Xmin B=7.35% along <1213> axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.
Abstract：Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA=0.3190nm, cA=0.5184nm and aB=0.3192nm, cB=0.5179nm), the crystal quality of two GaN epilayers ( Xmin A}=4.87%, Xmin B=7.35% along <1213> axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.
DING Zhi-Bo;WANG Kun;YAO Shu-De. A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling[J]. 中国物理快报, 2008, 25(3): 1131-1134.
DING Zhi-Bo, WANG Kun, YAO Shu-De. A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling. Chin. Phys. Lett., 2008, 25(3): 1131-1134.
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2008, Vol. 25 
