Current Self-Oscillations in Negative Effective Mass Terahertz
Oscillators
CAO Jun-Cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Current Self-Oscillations in Negative Effective Mass Terahertz
Oscillators
CAO Jun-Cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract： We theoretically study current self-oscillations and spatiotemporal current patterns in quantum-well negative-effective mass (NEM) p+pp+ diodes by considering scattering contributions from impurity, acoustic phonon, and optic phonon. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode presented here may be used as an electrically tunable terahertz source.
(Semiconductor-device characterization, design, and modeling)
引用本文:
CAO Jun-Cheng. Current Self-Oscillations in Negative Effective Mass Terahertz
Oscillators[J]. 中国物理快报, 2002, 19(10): 1519-1521.
CAO Jun-Cheng. Current Self-Oscillations in Negative Effective Mass Terahertz
Oscillators. Chin. Phys. Lett., 2002, 19(10): 1519-1521.
2002, Vol. 19 
