Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser
HE Xiao-Yong, CAO Jun-Cheng, L{U} Jing-Tao, FENG Song-Lin
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser
HE Xiao-Yong;CAO Jun-Cheng;L{U} Jing-Tao;FENG Song-Lin
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
关键词 :
73.61.Ey ,
42.55.Rz ,
85.30.De ,
63.20.Kr
Abstract : We have performed the calculation of resonant-phonon transition in a terahertz quantum cascade laser. The electron wavefunctions and energy levels are obtained by solving the Schrödinger and Poisson equations self-consistently. The scattering rates of the confined, interface, and bulk phonons are calculated by using the Fermi golden rule. It has been shown that the confined phonon scattering is comparable to the interface phonon scattering and should be taken into consideration in the calculation.
Key words :
73.61.Ey
42.55.Rz
85.30.De
63.20.Kr
出版日期: 2005-12-01
:
73.61.Ey
(III-V semiconductors)
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
85.30.De
(Semiconductor-device characterization, design, and modeling)
63.20.Kr
引用本文:
HE Xiao-Yong;CAO Jun-Cheng;L{U} Jing-Tao;FENG Song-Lin. Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser[J]. 中国物理快报, 2005, 22(12): 3163-3165.
HE Xiao-Yong, CAO Jun-Cheng, L{U} Jing-Tao, FENG Song-Lin. Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser. Chin. Phys. Lett., 2005, 22(12): 3163-3165.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I12/3163
[1]
LIU Bo;FENG Gao-Ming;WU Liang-Cai;SONG Zhi-Tang;LIU Qi-Bin;FENG Song-Lin;CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode [J]. 中国物理快报, 2007, 24(1): 262-264.
[2]
ZHU Yan-Xu;XU Chen;HAN Jun;SHEN Guang-Di. Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes [J]. 中国物理快报, 2007, 24(1): 268-270.
[3]
WU Liang-Cai;LIU Bo;SONG Zhi-Tang;FENG Gao-Ming;FENG Song-Lin;CHEN Bomy. Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy [J]. 中国物理快报, 2006, 23(9): 2557-2559.
[4]
ZHOU Cheng. LD Pump Single-Longitudinal-Mode Nd:GdVO4/RTP Solid-State Green Laser [J]. 中国物理快报, 2006, 23(9): 2455-2457.
[5]
LAI Yun-Feng;FENG Jie;QIAO Bao-Wei;HUANG Xiao-Gang;CAI Yan-Fei;LIN Yin-Yin;TANG Ting-Ao;CAI Bing-Chu;CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16 Sb33 Te51 /Si4 Sb45 Te51 /Si39 Sb Te50 ) for Phase Change Memory [J]. 中国物理快报, 2006, 23(9): 2516-2518.
[6]
ZHANG Ji-Ye;LIANG Xi-Xia;. Ground State of a Polaron in a Symmetric Triangular Quantum Well [J]. 中国物理快报, 2006, 23(8): 2198-2201.
[7]
ZHANG Ling;ZHANG Chun-Yu;WEI Zhi-Yi;ZHANG Zhi-Guo;Stephan Strohmaier;Hans J. Eichler. Characteristics of Nd:GdVO4 Laser with Different Nd-Doping Concentrations [J]. 中国物理快报, 2006, 23(8): 2088-2091.
[8]
WANG Chun-Yu; JI Jiang-Hua; QI Yun-Feng;LOU Qi-Hong;ZHU Xiao-Lei; LU Yu-Tian. Kilohertz Electro-Optic Q-Switched Nd:YAG Ceramic Laser [J]. 中国物理快报, 2006, 23(7): 1797-1802.
[9]
BO Yong;GENG Ai-Cong;LU Yuan-Fu;YANG Xiao-Dong;PENG Qin-Jun;CUI Qian-Jin;CUI Da-Fu;XU Zu-Yan. A 4.8-W M2 =4.6 Continuous-Wave Intracavity Sum-Frequency Diode-Pumped Solid-State Yellow Laser [J]. 中国物理快报, 2006, 23(6): 1494-1497.
[10]
ZHANG Ling;ZHANG Chun-Yu;WEI Zhi-Yi;ZHANG Chi;LONG Yong-Bing;ZHANG Zhi-Guo;ZHANG Huai-Jin;WANG Ji-Yang. Compact Diode-Pumped Continuous-Wave Nd:LuVO4 Lasers Operated at 916nm and 458nm [J]. 中国物理快报, 2006, 23(5): 1192-1194.
[11]
ZHAO Xu;WANG Yan;YU Zhi-Ping. Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors [J]. 中国物理快报, 2006, 23(5): 1327-1330.
[12]
HUANG Ying-Long;MA Long;YANG Fu-Hua;WANG Liang-Chen;ZENG Yi-Ping. Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates [J]. 中国物理快报, 2006, 23(3): 697-700.
[13]
WANG Su-Mei;ZHANG Qiu-Lin;ZHANG Ling;ZHANG Chun-Yu;ZHANG Dong-Xiang;FENG Bao-Hua;ZHANG Zhi-Guo. Diode-Pumped Passive Q-Switched 946nm Nd:YAG Laser with a GaAs Saturable Absorber [J]. 中国物理快报, 2006, 23(3): 619-621.
[14]
WANG Cui-Luan;WANG Yong-Gang;MA Xiao-Yu;LIU Yang;SUN Li-Qun;TIAN Qian;ZANG Zhi-Gang;WANG Qin-Yue. Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd:YVO4 Laser [J]. 中国物理快报, 2006, 23(3): 616-618.
[15]
ZHANG Yu-Ping;ZHENG Yi;ZHANG Hui-Yun;YAO Jian-Quan. A Laser-Diode-Pumped 7.36W Continuous-Wave Nd:YVO4 Laser At 1342nm [J]. 中国物理快报, 2006, 23(2): 363-365.