摘要A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate (DG) MOSFETs is presented. The effects of doping (NA for nMOS) and minority carriers both are taken into account for the first time, in solving Poisson's equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channel-doping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design.
Abstract：A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate (DG) MOSFETs is presented. The effects of doping (NA for nMOS) and minority carriers both are taken into account for the first time, in solving Poisson's equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channel-doping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design.
LI Meng;TANG Jian-Shi;LV Yang;YU Zhi-Ping. A Closed-Form Model for Position-Dependent Potential across the Channel in DG-MOSFETs[J]. 中国物理快报, 2009, 26(1): 18501-018501.
LI Meng, TANG Jian-Shi, LV Yang, YU Zhi-Ping. A Closed-Form Model for Position-Dependent Potential across the Channel in DG-MOSFETs. Chin. Phys. Lett., 2009, 26(1): 18501-018501.
2009, Vol. 26 
