Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy
HAO Xiao-Peng1, ZHOU Chun-Lan3, WANG Bao-Yi2, WEI Long2
1Division of Thermometry and Material Evaluation, National Institute of Metrology, Beijing 1000132Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190
Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy
HAO Xiao-Peng1, ZHOU Chun-Lan3, WANG Bao-Yi2, WEI Long2
1Division of Thermometry and Material Evaluation, National Institute of Metrology, Beijing 1000132Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190
摘要Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The negatively charge point defects (probably Pb centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and O atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.
Abstract：Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The negatively charge point defects (probably Pb centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and O atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.
HAO Xiao-Peng;ZHOU Chun-Lan;WANG Bao-Yi;WEI Long. Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy[J]. 中国物理快报, 2009, 26(4): 46101-046101.
HAO Xiao-Peng, ZHOU Chun-Lan, WANG Bao-Yi, WEI Long. Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy. Chin. Phys. Lett., 2009, 26(4): 46101-046101.
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2009, Vol. 26 
