The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.
The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.
CAO Bo;LI Gong-Ping;CHEN Xi-Meng;CHO Seong-Jin;KIM Hee. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition[J]. 中国物理快报, 2008, 25(4): 1400-1402.
CAO Bo, LI Gong-Ping, CHEN Xi-Meng, CHO Seong-Jin, KIM Hee. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition. Chin. Phys. Lett., 2008, 25(4): 1400-1402.
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