The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.
The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.
CAO Bo;LI Gong-Ping;CHEN Xi-Meng;CHO Seong-Jin;KIM Hee. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition[J]. 中国物理快报, 2008, 25(4): 1400-1402.
CAO Bo, LI Gong-Ping, CHEN Xi-Meng, CHO Seong-Jin, KIM Hee. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition. Chin. Phys. Lett., 2008, 25(4): 1400-1402.
[1] Murarka S P 1997 Mater. Sci. Eng. R19 87 [2] Kim D H et al 1996 Appl. Phys. Lett. 69 4182 [3] Chang C A 1990 J. Appl. Phys. 67 566 [4] Benouattas N et al 2000 Appl. Surf. Sci. 15379 [5] Nakahara T et al 1990 Nucl. Instrum. Methods B 45 467 [6] Sekar K et al 1992 Nucl. Instrum. Methods B 71 308 [7] Sekar K et al 1993 Nucl. Instrum. Methods B 73 63 [8] Cao B et al 2006 Acta Phys Sin. 55 6550 (inChinese) [9] Takagi T 1988 Ionized-Cluster Beam Deposition andEpitaxy (Park Ridge, NJ: Noyes Publications) [10] Takagi T 1988 Pure Appl. Chem. 60 781 [11] Takaoka G H et al 1989 Nucl. Instrum. MethodsB\, 37/38 882 [12] Yamada I 1995 Nucl. Instrum. Methods B 99 240 [13] Poate J M et al 1975 J. Appl. Phys. 46 4275.
2008, Vol. 25 
