中国物理快报  2008, Vol. 25 Issue (1): 242-245    
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Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing
HAN Gen-Quan1, ZENG Yu-Gang1, YU Jin-Zhong1, CHENG Bu-Wen1, YANG Hai-Tao2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084
Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing
HAN Gen-Quan1;ZENG Yu-Gang1;YU Jin-Zhong1;CHENG Bu-Wen1;YANG Hai-Tao2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084