Photoluminescence of a ZnO/GaN Heterostructure Interface
LIU Shu-Jian1, YU Qing-Xuan1,2, WANG Jian2, LIAO Yuan1, LI Xiao-Guang1
1Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 2300262State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083
Photoluminescence of a ZnO/GaN Heterostructure Interface
LIU Shu-Jian1, YU Qing-Xuan1,2, WANG Jian2, LIAO Yuan1, LI Xiao-Guang1
1Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 2300262State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083
摘要Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence (PL) of the associated GaN layer shows that the donor-acceptor luminescence of GaN shifts to about 3.27eV, which is consistent with the electroluminescence (EL) of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the GaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/GaN p-n junctions.
Abstract：Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence (PL) of the associated GaN layer shows that the donor-acceptor luminescence of GaN shifts to about 3.27eV, which is consistent with the electroluminescence (EL) of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the GaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/GaN p-n junctions.
LIU Shu-Jian;YU Qing-Xuan;WANG Jian;LIAO Yuan;LI Xiao-Guang. Photoluminescence of a ZnO/GaN Heterostructure Interface[J]. 中国物理快报, 2009, 26(7): 77805-077805.
LIU Shu-Jian, YU Qing-Xuan, WANG Jian, LIAO Yuan, LI Xiao-Guang. Photoluminescence of a ZnO/GaN Heterostructure Interface. Chin. Phys. Lett., 2009, 26(7): 77805-077805.
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