Diffusion Behavior of Cumulative He Doped in Cu/W Multilayer Nanofilms at Room Temperature
Ling Wang1,3 , Wang Liu1 , Yue Li2 , Yun-Long Shi2 , Yuan-Xia Lao1 , Xiao-Bo Lu2 , Ai-Hong Deng1,2** , Yuan Wang1**
1 Key Laboratory for Radiation Physics and Technology (Ministry of Education), Institute of Nuclear Science and Technology, Sichuan University, Chengdu 6100642 College of Physical Science and Technology, Sichuan University, Chengdu 6100643 School of Nuclear Engineering and Geophysics, East China University of Technology, Nanchang 330013
Abstract ：Cu/W multilayer nanofilms are prepared in pure Ar and He/Ar mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu/W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.
收稿日期: 2015-10-13
出版日期: 2016-06-30
:
68.65.Ac
(Multilayers)
68.37.-d
(Microscopy of surfaces, interfaces, and thin films)
68.35.Fx
(Diffusion; interface formation)
引用本文:
. [J]. 中国物理快报, 2016, 33(06): 66801-066801.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/6/066801
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I06/66801
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