摘要Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ε| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.
Abstract:Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ε| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.
[1] Cho M H, Roh Y S and Whang C N 2002 Appl. Phys. Lett. 81 472 [2] Osten H J, Liu J P and Gaworzewski P 2000 Technical Digest, International Electron Devices Meeting p 653 [3] Robertson J 2000 J. Vac. Sci. Technol. B 18 1785 [4] Xu R, Zhu Y Y and Chen S 2005 J. Cryst. Growth 277 496 [5] Kaul V K and Saxena U 1977 Acta Cryst. A 33 992 [6] Queralt X, Ferrater C and S\'anchez F 1995 Appl. Surf. Sci. 86 95 [7] Kennou S, Ladas S and Grimaldi M G 1996 Appl. Surf. Sci. 102 142 [8] Ono H and Katsumata T 2001 Appl. Phys. Lett. 78 1832 [9] Mikhelashvili V, Eisenstein G and Edelman F 2001 J. Appl.Phys. 90 5447 [10] Mikhelasvili V, Eisenstein G and Edelman F 2002 Appl. Phys.Lett. 80 2156 [11] Mikhelasvili V, Eisenstein G and Edelman F 2004 J. Appl.Phys. 95 613 [12] P\"aiv\"asaari J, Niinist?J and Arstila K 2005 Chem. Vap.Deposition 11 415 [13] Singh M P, Thakur C S and Shalini K 2003 Appl. Phys. Lett. 83 2889 [14] Zhu Y Y, Xu R and Chen S 2006 Thin Solid Films 508 86 [15] Shalini K and Shivashankar S A 2005 Bull. Mater. Sci. 28 49 [16] Wang J, Neaton J B and Zheng H 2003 Science 299 1719