摘要A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26mA, a slope efficiency of 0.14W・A-1 and a side mode suppression ratio of 40dB together with a 3dB bandwidth of more than 8GHz. The device is suitable for 10Gbit/s optical fiber communication.
Abstract：A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26mA, a slope efficiency of 0.14W・A-1 and a side mode suppression ratio of 40dB together with a 3dB bandwidth of more than 8GHz. The device is suitable for 10Gbit/s optical fiber communication.
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2009, Vol. 26 
