Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers
XU Zhang-Cheng1, ZHANG Ya-Ting1, Jørn M. Hvam2, Yoshiji Horikoshi3
1Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, Nankai University, Tianjin 3004572Department of Communications, Optics and Materials, and Nano.DTU, Technical University of Denmark, DK-2800 Lyngby, Denmark3School of Science & Engineering, Waseda University, Sinjuku-Ku, Tokyo 169-8555, Japan
Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers
XU Zhang-Cheng1, ZHANG Ya-Ting1, Jørn M. Hvam2, Yoshiji Horikoshi3
1Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, Nankai University, Tianjin 3004572Department of Communications, Optics and Materials, and Nano.DTU, Technical University of Denmark, DK-2800 Lyngby, Denmark3School of Science & Engineering, Waseda University, Sinjuku-Ku, Tokyo 169-8555, Japan
摘要The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant Förster energy transfer between the wetting layer states at elevated temperatures.
Abstract：The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant Förster energy transfer between the wetting layer states at elevated temperatures.
XU Zhang-Cheng;ZHANG Ya-Ting;Jørn M. Hvam;Yoshiji Horikoshi. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers[J]. 中国物理快报, 2009, 26(5): 57304-057304.
XU Zhang-Cheng, ZHANG Ya-Ting, Jø, rn M. Hvam, Yoshiji Horikoshi. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers. Chin. Phys. Lett., 2009, 26(5): 57304-057304.
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2009, Vol. 26 
