摘要We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (τ1h= 196±17ps) that is in the magnitude similar to electrons (τ1e=354±32ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.
Abstract：We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (τ1h= 196±17ps) that is in the magnitude similar to electrons (τ1e=354±32ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.
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2009, Vol. 26 
