摘要Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350°C, 450°C, 550°C and 650°C, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650°C in oxygen with a pressure of 1×105 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350°C to 550°C. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350°C and 450°C show a strong acceptor-bound exciton (A0X) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350°C and 450°C exhibit p-type conductivity. The p-type ZnO:P film deposited at 450°C shows a resistivity of 1.846Ω・cm and a relatively high hole concentration of 5.100×1017 cm-3 at room temperature.
Abstract：Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350°C, 450°C, 550°C and 650°C, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650°C in oxygen with a pressure of 1×105 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350°C to 550°C. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350°C and 450°C show a strong acceptor-bound exciton (A0X) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350°C and 450°C exhibit p-type conductivity. The p-type ZnO:P film deposited at 450°C shows a resistivity of 1.846Ω・cm and a relatively high hole concentration of 5.100×1017 cm-3 at room temperature.
ZHAO Zi-Wen;HU Li-Zhong;ZHANG He-Qiu;SUN Jing-Chang;BIAN Ji-Ming;LIANG Hong-Wei;HUO Bing-Zhi;YU Dong-Qi;CHEN Xi;FU Qiang. Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates[J]. 中国物理快报, 2009, 26(5): 57305-057305.
ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu, SUN Jing-Chang, BIAN Ji-Ming, LIANG Hong-Wei, HUO Bing-Zhi, YU Dong-Qi, CHEN Xi, FU Qiang. Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates. Chin. Phys. Lett., 2009, 26(5): 57305-057305.
[1] Look D C 2001 Mater. Sci. Eng. B 80 383 [2] Sun J C et al 2008 Appl. Sur. Sci. 254 7482 [3]Kim K K et al 2003 Appl. Phys. Lett. 83 63 [4]Ryu Y R et al 2003 Appl. Phys. Lett. 83 87 [5]Aoki T et al 2002 Phys. Status Solidi B 229 911 [6]Jiang J et al 2008 Mater. Lett. 62 536 [7] Chen Y F et al 1998 J. Appl. Phys. 84 3912 [8] Sun J C et al 2008 Chin. Phys. lett. 25 4345 [9] Kim H et al 2002 Thin Solid Films. 420--421107 [10] Ma T Y and Lee S C 2000 J. Mater. Sci. Mater.Electron. 11 305 [11] Song D et al 2002 Sol. Energy Mater. Sol. Cell. 73 1 [12] Xiu F X et al 2006 Appl. Phys. Lett. 88152116 [13] Limpijumnong S et al 2004 Phys. Rev. Lett. 92155504 [14] Teke A et al 2004 Phys. Rev. B 70 195207 [15] Reynolds D C et al 1998 Phys. Rev. B 5712151
2009, Vol. 26 
