Observation of a Flat Band in Silicene
FENG Ya, FENG Bao-Jie, XIE Zhuo-Jin, LI Wen-Bin, LIU Xu, LIU De-Fa, ZHAO Lin, CHEN Lan, ZHOU Xing-Jiang** , WU Ke-Hui**
Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract :The electronic structure of silicene on Ag(111) is studied by scanning tunneling microscopy and angle resolved photoemission spectroscopy. A flat band at 0.9 eV below the Fermi level is revealed. We find that the flat band is strongly suppressed near atomic defects, domain boundaries and step edges compared to that on the flat terraces. The discovery of the flat band and its sensitivity to local perturbations provides a new way to manipulate the electronic structure and properties of silicene.
收稿日期: 2014-10-21
出版日期: 2015-01-12
:
73.20.At
(Surface states, band structure, electron density of states)
73.90.+f
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
引用本文:
. [J]. 中国物理快报, 2014, 31(12): 127303-127303.
FENG Ya, FENG Bao-Jie, XIE Zhuo-Jin, LI Wen-Bin, LIU Xu, LIU De-Fa, ZHAO Lin, CHEN Lan, ZHOU Xing-Jiang, WU Ke-Hui. Observation of a Flat Band in Silicene. Chin. Phys. Lett., 2014, 31(12): 127303-127303.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/12/127303
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I12/127303
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