Remanence Enhancement Effect in Ni$_{0.7}$Zn$_{0.3}$Fe$_{2}$O$_{4}$/Co$_{0.8}$Fe$_{2.2}$O$_{4}$ Ferrite Multilayer Film
Cheng-Hua Fan1,2 , Qun-Jing Wang1 , Zhen-Fa Zi2**
1 School of Electrical Engineering and Automation, Anhui University, Hefei 2306012 School of Electrical and Information Engineering, Hefei Normal University, Hefei 230601
Abstract :Ni$_{0.7}$Zn$_{0.3}$Fe$_{2}$O$_{4}$/Co$_{0.8}$Fe$_{2.2}$O$_{4}$ (NZFO/CFO) multilayer films are fabricated on Si(100) substrates by the chemical solution deposition method. The microstructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 300 nm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.
收稿日期: 2016-05-24
出版日期: 2016-11-28
:
73.61.-r
(Electrical properties of specific thin films)
73.90.+f
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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