Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates
ZHAO Zi-Wen1,2, HU Li-Zhong1,2, ZHANG He-Qiu1,2, SUN Jing-Chang1,2, BIAN Ji-Ming1,2, SUN Kai-Tong1,2, CHEN Xi1,2, ZHAO Jian-Ze1,2, LI Xue1,2, ZHU Jin-Xia1,2
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024
Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates
ZHAO Zi-Wen1,2, HU Li-Zhong1,2, ZHANG He-Qiu1,2, SUN Jing-Chang1,2, BIAN Ji-Ming1,2, SUN Kai-Tong1,2, CHEN Xi1,2, ZHAO Jian-Ze1,2, LI Xue1,2, ZHU Jin-Xia1,2
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024
摘要Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω・cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A0X) emission.
Abstract：Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω・cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A0X) emission.
ZHAO Zi-Wen;HU Li-Zhong;ZHANG He-Qiu;SUN Jing-Chang;BIAN Ji-Ming;SUN Kai-Tong;CHEN Xi;ZHAO Jian-Ze;LI Xue;ZHU Jin-Xia;. Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates[J]. 中国物理快报, 2010, 27(1): 17301-017301.
ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu, SUN Jing-Chang, BIAN Ji-Ming, SUN Kai-Tong, CHEN Xi, ZHAO Jian-Ze, LI Xue, ZHU Jin-Xia,. Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates. Chin. Phys. Lett., 2010, 27(1): 17301-017301.
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2010, Vol. 27 
