Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment
ZHANG Xian-Gao1, CHEN Kun-Ji1, FANG Zhong-Hui1, QIAN Xin-Ye1, LIU Guang-Yuan1, JIANG Xiao-Fan1, MA Zhong-Yuan1, XU Jun1, HUANG Xin-Fan1, JI Jian-Xin2, HE Fei2, SONG Kuang-Bao2, ZHANG Jun2, WAN Hui2, WANG Rong-Hua2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061
Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment
ZHANG Xian-Gao1, CHEN Kun-Ji1, FANG Zhong-Hui1, QIAN Xin-Ye1, LIU Guang-Yuan1, JIANG Xiao-Fan1, MA Zhong-Yuan1, XU Jun1, HUANG Xin-Fan1, JI Jian-Xin2, HE Fei2, SONG Kuang-Bao2, ZHANG Jun2, WAN Hui2, WANG Rong-Hua2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061
A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density (3×1011 cm-2) were deposited on ultra-thin tunnel oxide layer (~ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4V was obtained and it would be larger than 1.3V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate.
A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density (3×1011 cm-2) were deposited on ultra-thin tunnel oxide layer (~ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4V was obtained and it would be larger than 1.3V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate.
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2010, Vol. 27 
