A Photovoltaic InAs Quantum-Dot Infrared Photodetector
TANG Guang-Hua, XU Bo, JIANG Li-Wen, KONG Jin-Xia, KONG Ning, LIANG De-Chun, LIANG Ping, YE Xiao-Ling, JIN Peng, LIU Feng-Qi, CHEN Yong-Hai, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Sciences, Instituteof Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
A Photovoltaic InAs Quantum-Dot Infrared Photodetector
TANG Guang-Hua, XU Bo, JIANG Li-Wen, KONG Jin-Xia, KONG Ning, LIANG De-Chun, LIANG Ping, YE Xiao-Ling, JIN Peng, LIU Feng-Qi, CHEN Yong-Hai, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Sciences, Instituteof Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2-7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78 K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.
A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2-7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78 K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.
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2010, Vol. 27 
