In-Plane Optical Anisotropy of a -Plane GaN Film on r -Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
DING Yu1 , LIU Bin1** , TAO Tao1 , LI Yi1 , ZHANG Zhao1 , ZHANG Rong1** , XIE Zi-Li1 , ZHAO Hong1 , GU Shu-Lin1 , LV Peng2 , ZHU Shi-Ning2 , ZHENG You-Dou1
1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 2100932 School of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
Abstract ：The in-plane optical anisotropic properties of the non-polar a -plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence (PL), optical transmission and Raman scattering measurements. Through polarised PL and transmission spectra, the in-plane optical anisotropic properties of a -plane GaN film are found, which are attributed to the topmost valance band (at Γ point) split into three sub-bands under anisotropic strain. The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain. Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a -plane GaN films.
收稿日期: 2012-04-12
出版日期: 2012-10-01
:
78.66.Fd
(III-V semiconductors)
71.20.Nr
(Semiconductor compounds)
81.05.Ea
(III-V semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
. [J]. 中国物理快报, 2012, 29(10): 107801-107801.
a -Plane GaN Film on r -Plane Sapphire Grown by Metal Organic Chemical vapour Deposition. Chin. Phys. Lett., 2012, 29(10): 107801-107801.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/29/10/107801
或
https://cpl.iphy.ac.cn/CN/Y2012/V29/I10/107801
[1] Waltereit P, Brandt O, Ramsteiner M, Trampert A et al 2000 Phys. Status Solidi A 180 133 2000 Nature 406 865 2008 Phys. Status Solidi B 245 1011 2007 Appl. Phys. Lett. 91 253506 2008 Appl. Phys. Lett. 92 261906 2011 Chin. Phys. B 20 017804 1999 J. Appl. Phys. 86 3714 1999 Appl. Phys. Lett. 74 3827 2007 Phys. Status Solidi B 244 1839 2009 MRS Bull. 34 341 2003 Mater. Res. Soc. Symp. Proc. 798 2003 J. Appl. Phys. 93 316 2004 Chin. Phys. Lett. 21 970 2010 J. Cryst. Growth 312 3438 2011 Chin. Phys. B 20 057801 2009 J. Cryst. Growth 311 2906 2009 Appl. Phys. Lett. 94 231102 2012 Chin. Phys. Lett. 29 026801 2010 Phys. Status Solidi C 7 1897 2010 Appl. Surf. Sci. 257 1181 2010 Phys. Status Solidi C 7 2073 2005 J. Appl. Phys. 98 093519 Semiconduct. Technol. Suppl. 33 158 (in Chinese)Semiconduct. Technol. Suppl. 33 167 (in Chinese)2007 J. Rare Earths Suppl. II 25 356 1995 Phys. Rev. B 52 8132 1997 Appl. Phys. Lett. 71 1996 1995 Appl. Phys. Lett. 67 2527 2002 Phys. Rev. B 65 075202 2005 J. Appl. Phys. 98 026105 2004 J. Cryst. Growth 263 76 2009 J. Appl. Phys. 106 023714 1997 J. Appl. Phys. 82 5097 2000 Appl. Phys. Lett. 77 346
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
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[9]
.
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2012, Vol. 29 
