Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template
YU Zhi-Guo1, CHEN Peng1,2** YANG Guo-Feng1, LIU Bin1, XIE Zi-Li1, XIU Xiang-Qian1, WU Zhen-Long2, XU Feng2, XU Zhou2, HUA Xue-Mei1, HAN Ping1, SHI Yi1 ZHANG Rong1, ZHENG You-Dou1
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009
Abstract：Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film, followed by a low damage dry etching process, a p-side-up LED with a roughened surface has been fabricated. Compared to a conventional LED with plane surface, the light output of LEDs with nanoporous p-GaN surface increases up to 71% and 36% at applied currents of 1 mA and 20 mA, respectively. Meanwhile, the electrical characteristics are not degraded obviously after surface roughening.
2012, Vol. 29 
