Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions
TENG Long**, ZHANG Rong**, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions
TENG Long**, ZHANG Rong**, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
摘要InxGa1−xN alloys with low indium composition x in the range 0.13≤x≤0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x−ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13≤x≤0.16) and relaxed (0.18≤x≤0.23). The prominent enhancement of A1 longitudinal−optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A1 (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1−xN samples, a linear dependence of the A1 (LO) mode frequency is obtained: Ω0 (x)=(740.8±3.3)−(143.1±16.0)x, which is the evidence of one-mode behavior in InxGa1−xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.
Abstract：InxGa1−xN alloys with low indium composition x in the range 0.13≤x≤0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x−ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13≤x≤0.16) and relaxed (0.18≤x≤0.23). The prominent enhancement of A1 longitudinal−optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A1 (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1−xN samples, a linear dependence of the A1 (LO) mode frequency is obtained: Ω0 (x)=(740.8±3.3)−(143.1±16.0)x, which is the evidence of one-mode behavior in InxGa1−xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.
TENG Long**, ZHANG Rong**, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions[J]. 中国物理快报, 2012, 29(2): 27803-027803.
TENG Long, ZHANG Rong, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions. Chin. Phys. Lett., 2012, 29(2): 27803-027803.
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