Photocatalysis of InGaN Nanodots Responsive to Visible Light
WANG Lai**, ZHAO Wei, HAO Zhi-Biao, LUO Yi
Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
Photocatalysis of InGaN Nanodots Responsive to Visible Light
WANG Lai**, ZHAO Wei, HAO Zhi-Biao, LUO Yi
Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
摘要Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied. Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed. Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN, larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.
Abstract：Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied. Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed. Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN, larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.
WANG Lai**;ZHAO Wei;HAO Zhi-Biao;LUO Yi
. Photocatalysis of InGaN Nanodots Responsive to Visible Light[J]. 中国物理快报, 2011, 28(5): 57301-057301.
WANG Lai**, ZHAO Wei, HAO Zhi-Biao, LUO Yi
. Photocatalysis of InGaN Nanodots Responsive to Visible Light. Chin. Phys. Lett., 2011, 28(5): 57301-057301.
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2011, Vol. 28 
