Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
CHEN Ting1, HONG Tao1, PAN Jiao-Qing2, CHEN Wei-Xi1, CHENG Yuan-Bing2, WANG Yang2, MA Xiao-Bo3, LIU Wei-Li3, ZHAO Ling-Juan2, RAN Guang-Zhao1, WANG Wei2, QIN Guo-Gang1
1State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 1008712Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000833State Key Laboratory of Functional Materials for Informatics, Laboratory of Nano Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
CHEN Ting1, HONG Tao1, PAN Jiao-Qing2, CHEN Wei-Xi1, CHENG Yuan-Bing2, WANG Yang2, MA Xiao-Bo3, LIU Wei-Li3, ZHAO Ling-Juan2, RAN Guang-Zhao1, WANG Wei2, QIN Guo-Gang1
1State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 1008712Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000833State Key Laboratory of Functional Materials for Informatics, Laboratory of Nano Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm2 and a slope efficiency of 0.02W/A. The 1542nm laser output exits mainly from the Si waveguide.
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm2 and a slope efficiency of 0.02W/A. The 1542nm laser output exits mainly from the Si waveguide.
[1] Pavesi L and Lockwood D J 2004 Silicon Photonics(Berlin: Springer) [2] Reed G T and Knights A P 2004 Silicon Photonics: AnIntroduction (Chichester: John Wiley {\& Sons Ltd) [3] Windhorn T H et al 1984 Appl. Phys. Lett. 45309 [4] Sakai S et al 1986 Appl. Phys. Lett. 48 413 [5] Fischer R et al 1986 Appl. Phys. Lett. 481360 [6] Dupuis R D et al 1987 Appl. Phys. Lett. 50 407 [7] Razeghi M et al 1988 Appl. Phys. Lett. 53 2389 [8] Sugo M, Mori H, Tachikawa M, Itoh Y and Yamamoto M 1990 Appl. Phys. Lett. 57 593 [9] Roelkens G, Van Campenhout J, Brouckaert J, Van ThourhoutD, Baets R, Romeo P R, Regreny P et al 2007 Materials Today 10 36 [10] Yablonovitch E, Hwang D M, Gmitter T J, Florez L T andHarbison J P 1990 Appl. Phys. Lett. 56 2419 [11] Lo Y H, Bhat R, Hwang D M, Koza M A and Lee T P 1991 Appl. Phys. Lett. 58 1961 [12] Wada H and Kamijoh T 1996 IEEE Photon. Technol.Lett. 8 173 [13] Liang T, Guo X, Guan B L, Guo J, Gu X L, Lin Q M and ShenG D 2007 Chin. Phys. Lett. 24 1110 [14] Zhen W B, Liu W L, Song Z T, Feng S L, Zhu S F and Zhao BJ 2004 Chin. Phys. Lett. 21 2540 [15] Pasquariello D and Hjort K 2002 IEEE J. Sel. Top.Quantum Electron. 8 118 [16] Tong Q Y, Gan Q, Hudson G, Fountain G and Enquist P 2004 Appl. Phys. Lett. 84 732 [17] Morral A F i, Zahler J M, Atwater H A, Ahrenkiel S P andWanlass M W 2003 Appl. Phys. Lett. 83 5413 [18] Fang A W, Park H, Cohen O, Jones R, Paniccia M J andBowers J E 2006 Opt. Express 14 9203 [19] Fang A W, Park H, Kuo Y H, Jones R, Cohen O, Liang D,Raday O, Sysak M N, Paniccia M J and Bowers J E 2007 MaterialsToday 10 28 [20] Roelkens G, Van Thourhout D, Baets R, Notzel R and Smit M2006 Opt. Express 14 8154 [21] Van Campenhout J, Rojo-Romeo P, Regreny P, Seassal C, VanThourhout D, Verstuyft S, Cioccio L Di, Fedeli J M, Lagahe C andBaets R 2007 Opt. Express 15 6744 [22] Georgakilas A, Deligeorgis G, Aperathitis E, Cengher D,Hatzopoulos Z, Alexe M, Dragoi V, Gosele U, Kyriakis-Bitzaros E D,Minoglou K and Halkias G 2002 Appl. Phys. Lett. 81 5099 [23] Liu C C, Lin Y K, Houng M P and Wang Y H 2003 IEEETrans. Compon. Packag. Technol. 26 635 [24] Higurashi E, Imamura T, Suga T and Sawada R 2007 IEEE Photon. Technol. Lett. 19 1994 [25] Andrijasevic D, Austerer M, Andrews A M, Klang P, SchrenkW and Strasser G 2008 Appl. Phys. Lett. 92 051117 [26] Tsau C H, Spearing S M and Schmidt M A 2004 J.Microelectromech. Syst. 13 963 [27] Qin G G, Hong T, Chen T, Ran G Z and Chen W X Chinese Patent Pending: Fabrication Method of Metal BondingSi-Based Lasers
2009, Vol. 26 
