Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires
FU Xin1,2, JIANG Jun1,2, LIU Chao1, YU Zhi-Yang1,2, Steffan LEA3, YUAN Jun2,3
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 1000843Department of Physics, University of York, York YO10 5DD, U.K.
Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires
FU Xin1,2, JIANG Jun1,2, LIU Chao1, YU Zhi-Yang1,2, Steffan LEA3, YUAN Jun2,3
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 1000843Department of Physics, University of York, York YO10 5DD, U.K.
摘要We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.
Abstract：We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.
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2009, Vol. 26 
