摘要A method for the fabrication of well-ordered periodic GaAs nanowires (NWs) is developed based on a combination of colloidal lithography and an inductively coupled plasma (ICP) etching technique using CHF3/Ar and Cl2/N2/BCl3 chemistry. The effects of etching parameters such as flow rate, and etching duration on NW fabrication are investigated. The reflectance spectra of the GaAs NW samples are measured and compared with NWs fabricated by molecular beam epitaxy.
Abstract：A method for the fabrication of well-ordered periodic GaAs nanowires (NWs) is developed based on a combination of colloidal lithography and an inductively coupled plasma (ICP) etching technique using CHF3/Ar and Cl2/N2/BCl3 chemistry. The effects of etching parameters such as flow rate, and etching duration on NW fabrication are investigated. The reflectance spectra of the GaAs NW samples are measured and compared with NWs fabricated by molecular beam epitaxy.
CHEN Ke1, HE Jian-Jun1, LI Ming-Yu1**, LaPierre R2. Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching[J]. 中国物理快报, 2012, 29(3): 36105-036105.
CHEN Ke, HE Jian-Jun, LI Ming-Yu, LaPierre R. Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching. Chin. Phys. Lett., 2012, 29(3): 36105-036105.
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