Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate
WANG Wei1,2,3, MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Graduate School of Chinese Academy of Sciences, Beijing 100049
Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate
WANG Wei1,2,3, MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Graduate School of Chinese Academy of Sciences, Beijing 100049
摘要A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a floating gate structure. The floating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate.
Abstract：A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a floating gate structure. The floating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate.
(Superconducting logic elements and memory devices; microelectronic circuits)
引用本文:
WANG Wei;;MA Dong-Ge. Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate[J]. 中国物理快报, 2010, 27(1): 18503-018503.
WANG Wei, , MA Dong-Ge. Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate. Chin. Phys. Lett., 2010, 27(1): 18503-018503.
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2010, Vol. 27 
