中国物理快报  2010, Vol. 27 Issue (1): 18503-018503    DOI: 10.1088/0256-307X/27/1/018503
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate
WANG Wei1,2,3, MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Graduate School of Chinese Academy of Sciences, Beijing 100049
Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate
WANG Wei1,2,3, MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Graduate School of Chinese Academy of Sciences, Beijing 100049