摘要We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000ºC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.
Abstract：We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000ºC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.
[1] Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Nature 449 885 [2] Law M, Sirbuly, D J, Johnson, J C, Goldberger J, Saykally R J and Yang P 2004 Science 305 1269 [3] Patolsky F, Timko B P, Yu G, Fang Y, Greytak A B, Zheng G and Lieber C M 2006 Science 313 1100 [4] Chen X, Lee S J and Moskovits M 2007 Appl. Phys. Lett. 91 082109 [5] Boyer J C, Vetrone F, Cuccia L A and Capobianco J A 2006 J. Am. Chem. Soc. 128 7444 [6] Weyers M and Sato M 1993 Appl. Phys. Lett. 62 1396 [7] Monroy E, Andreev T, Holliger P, Bellet-Amalric E, Shibata T, Tanaka M and Daudin B 2004 Appl. Phys. Lett. 84 2554 [8] Lee J H, Hahm S H, Lee J H, Bae S B, Lee K S, Cho Y H and Lee J L 2003 Appl. Phys. Lett. 83 917 [9] Dietl T, Ohno H, Matsukura F, Cibet J and Ferrand D 2003 Science 287 1019 [10] Radovanovic P V, Barrelet C J, Gradecak S, Qian F and Lieber C M 2005 Nano Lett. 5 1407 [11] Choi H J, Seong H K, Chang J, Lee K I, Park Y J, Kim J J, Lee S K, He R, Kuykendall T and Yang P 2005 Adv. Mater. 17 1351 [12] Xu C, Chun J, Lee H J et al 2007 J. Phys. Chem. C 111 1180 [13] Wang Q, Sun Q and Jena P 2005 Phys. Rev. Lett. 95 167202 [14] Perlin P, Jauberthiecarillon C and Itie J P 1992 Phys. Rev. B 45 2312 [15] Nahlah E, Srinivasa R S and Major S 1998 Thin Solid Films 333 9 [16] Nahlah E, Srinivasa R S and Major S 1998 Thin Solid Films 333 9 [17] Kingsley C R, Whitaker T J and Wee A T S 1995 Mater. Sci. Eng. B 29 78 [18] Sasaki T and Matsuoka J 1998 Appl. Phys. 64 4531 [19] Amanullah F M, Pratap K J and Hari V B 1998 Mater. Sci. Eng. B 52 93 [20] Zolper J C, Crawford M H, Howard A J, Ramer J and Hersee S D 1996 Appl. Phys. Lett. 68 200 [21] Song Y P, Wang P W, Zhang X H, Xu J, Li, G H and Yu D P 2006 Phys. Lett. A 351 302 [22] Zhang D D, Xue C S, Zhuang H Z, Huang Y L, Wang Z P, Wang Y and Guo Y F 2008 Chin. Phys. Lett. 25 2664
2010, Vol. 27 
