Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
WANG Hui1, LIANG Hu2, WANG Yong2, NG Kar-Wei2, DENG Dong-Mei2, LAU Kei-May2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Photonics Technology Center, Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
WANG Hui1, LIANG Hu2, WANG Yong2, NG Kar-Wei2, DENG Dong-Mei2, LAU Kei-May2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Photonics Technology Center, Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
摘要We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.
Abstract：We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.
WANG Hui;LIANG Hu;WANG Yong;NG Kar-Wei;DENG Dong-Mei;LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. 中国物理快报, 2010, 27(3): 38103-038103.
WANG Hui, LIANG Hu, WANG Yong, NG Kar-Wei, DENG Dong-Mei, LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111). Chin. Phys. Lett., 2010, 27(3): 38103-038103.
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2010, Vol. 27 
