2010, Vol. 27(3): 38103-038103    DOI: 10.1088/0256-307X/27/3/038103
	Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
	WANG Hui1, LIANG Hu2, WANG Yong2, NG Kar-Wei2, DENG Dong-Mei2, LAU Kei-May2
	1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Photonics Technology Center, Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
	收稿日期 2009-12-11  修回日期 1900-01-01
	Supporting info
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