Diamond Nuclei on the Silicon Mirror Surface by Direct-Current
Glow Discharge Chemical Vapor Deposition
GAO Chunxiao, ZOU Guangtian, JIN Zengsun
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
Diamond Nuclei on the Silicon Mirror Surface by Direct-Current
Glow Discharge Chemical Vapor Deposition
GAO Chunxiao;ZOU Guangtian;JIN Zengsun
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
关键词 ：
81.15.Gh ,
61.50.Cj
Abstract ： A new method is proposed for generation of high density diamond nuclei in the dc glow discharge chemical vapor deposition. Application of dc negative valtage together with high methane content has been found to generate diamond nuclei as high as 1010 /cm2 on mirror-polished Si wafer. It has been indicated that carbon over-saturation, negative voltage and hydrogen play an important role in this new pretreatment process.
Key words ：
81.15.Gh
61.50.Cj
出版日期: 1994-03-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
61.50.Cj
引用本文:
GAO Chunxiao;ZOU Guangtian;JIN Zengsun. Diamond Nuclei on the Silicon Mirror Surface by Direct-Current
Glow Discharge Chemical Vapor Deposition
[J]. 中国物理快报, 1994, 11(3): 185-188.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I3/185
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