Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate
YIN Shiduan, XIAO Guangming, ZHU Peiran*
Institute of Semiconductors, Academia Sinica, Beijing 100083
* Institute of Physics, Academia Sinica, Beijing 100080
Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate
YIN Shiduan;XIAO Guangming;ZHU Peiran*
Institute of Semiconductors, Academia Sinica, Beijing 100083
* Institute of Physics, Academia Sinica, Beijing 100080
关键词 ：
73.40.Lq ,
81.15.Ef
Abstract ： A simple procedure for obtaining a background-free backscattering spectrum of a light-mass film on a heavy-mass substrate by a normal incidence/grazing exit geometry has been described. Using this method such films can be aligned rapidly and accurately, and the impurity or defect information on the films can be obtained without need for realignment. Example is given from MeV 3 Li+ analysis of a deposited film of Si on a single crystal substrate of yttria-stabilized, cubic zirconia.
Key words ：
73.40.Lq
81.15.Ef
出版日期: 1994-05-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
81.15.Ef
引用本文:
YIN Shiduan;XIAO Guangming;ZHU Peiran*. Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate[J]. 中国物理快报, 1994, 11(5): 293-296.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I5/293
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