Dynamic Scaling in Growth of ZrO2 Thin Films Prepared by Electronic Beam Evaporation
QI Hong-Ji1 , HUANG Li-Hua2 , YUAN Jing-Mei1 , CHENG Chuan-Fu1 , SHAO Jian-Da1 , FAN Zheng-Xiu1
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2 Laser Technology and Engineering Research Institute, Huazhong University of Science and Technology, Wuhan 430074
Dynamic Scaling in Growth of ZrO2 Thin Films Prepared by Electronic Beam Evaporation
QI Hong-Ji1 ;HUANG Li-Hua2 ;YUAN Jing-Mei1 ;CHENG Chuan-Fu1 ;SHAO Jian-Da1 ;FAN Zheng-Xiu1
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2 Laser Technology and Engineering Research Institute, Huazhong University of Science and Technology, Wuhan 430074
关键词 :
68.55.Jk ,
77.55.+f ,
81.15.Ef ,
68.37.Ps
Abstract : The growth front evolution of ZrO2 thin films deposited by electronic beam evaporation has been studied with atomic force microscopy. The dynamic scaling characteristics are observed during the deposition process. After numerical correlation analysis, the roughness exponent α = 0.80±0.005 and the growth exponent β = 0.141 are all obtained. Based on these results, we suggest that the growth of ZrO2 thin films can be described by the combination of the Edwards-Wilkinson equation, the Mullins diffusion equation and the shadowing effect.
Key words :
68.55.Jk
77.55.+f
81.15.Ef
68.37.Ps
出版日期: 2003-05-01
引用本文:
QI Hong-Ji;HUANG Li-Hua;YUAN Jing-Mei;CHENG Chuan-Fu;SHAO Jian-Da;FAN Zheng-Xiu. Dynamic Scaling in Growth of ZrO2 Thin Films Prepared by Electronic Beam Evaporation[J]. 中国物理快报, 2003, 20(5): 709-712.
QI Hong-Ji, HUANG Li-Hua, YUAN Jing-Mei, CHENG Chuan-Fu, SHAO Jian-Da, FAN Zheng-Xiu. Dynamic Scaling in Growth of ZrO2 Thin Films Prepared by Electronic Beam Evaporation. Chin. Phys. Lett., 2003, 20(5): 709-712.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I5/709
[1]
SUN Xi-Lian;SHAO Jian-Da. Effect of Alumina and Chromium Interlayers on Microstructures and Optical Properties of Thin Ag Films on Glass Substrates [J]. 中国物理快报, 2006, 23(9): 2576-2578.
[2]
LIU Xi-Zhe;HUANG Zhen;LI Ke-Xin;LI Hong;LI Dong-Mei;CHEN Li-Quan;MENG Qing-Bo. Recombination Reduction in Dye-Sensitized Solar Cells by Screen-Printed TiO2 Underlayers [J]. 中国物理快报, 2006, 23(9): 2606-2608.
[3]
XU Wei-Wei;DAI Song-Yuan; HU Lin-Hua;LIANG Lin-Yun;WANG Kong-Jia. Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells [J]. 中国物理快报, 2006, 23(8): 2288-2291.
[4]
XU Chuan-Ming;SUN Yun;ZHOU Lin;LI Feng-Yan; ZHANG Li;XUE Yu-Ming;ZHOU Zhi-Qiang;HE Qing. Preparation of Cu(In,Ga)Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere [J]. 中国物理快报, 2006, 23(8): 2259-2261.
[5]
LIU Yan-Ping;LAN Wei;HE Zhi-Wei;WANG Yin-Yue. Electrical Properties of La-Doped Al2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material [J]. 中国物理快报, 2006, 23(8): 2236-2238.
[6]
WEI He-Lin;ZHANG Xi-Xiang;HUANG Han-Chen. Spontaneous Hillock Growth on Indium Film Surface [J]. 中国物理快报, 2006, 23(7): 1880-1883.
[7]
SUI Xiao-Hong;PEI Wei-Hua;ZHANG Ruo-Xin;LU Lin;CHEN Hong-Da. A Micromachined SiO2 /Silicon Probe for Neural Signal Recordings [J]. 中国物理快报, 2006, 23(7): 1932-1934.
[8]
HE Jia-Qing;E. VASCO;R. DITTMANN;WANG Ren-Hui. Temperature-Dependent Structure of Epitaxial (Ba,Sr)TiO3 Films Grown on SrRuO3 -Covered SrTiO3 Substrates [J]. 中国物理快报, 2006, 23(5): 1269-1272.
[9]
SUN Jian;BAI Yi-Zhen;YANG Tian-Peng;XU Yi-Bin;WANG Xin-Sheng;DU Guo-Tong;WU Han-Hua. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films [J]. 中国物理快报, 2006, 23(5): 1321-1323.
[10]
ZHANG Gu-Ling;WANG Jiu-Li;WU Xing-Fang;FENG Wen-Ran;CHEN Guang-Liang;GU Wei-Chao;NIU Er-Wu;FAN Song-Hua;LIU Chi-Zi;YANG Si-Ze. Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation [J]. 中国物理快报, 2006, 23(5): 1241-1244.
[11]
ZHANG Qin-Yuan; YANG Gang-Feng;JIANG Zhong-Hong;W. X. Que. Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2 :Er3+ Films [J]. 中国物理快报, 2006, 23(4): 852-855.
[12]
XIE Jing;ZHANG De-Qiang;WANG Li-Duo;DUAN Lian;QIAO Juan;QIU Yong. Improved Performance of Organic Light-Emitting Diodes with MgF2 as the Anode Buffer Layer [J]. 中国物理快报, 2006, 23(4): 928-931.
[13]
XIANG Wen-Feng;LU Hui-Bin;YAN Lei;HE Meng;ZHOU Yue-Liang;CHEN Zheng-Hao. Formation of Interfacial Layers in LaAlO3 /Silicon during Film Deposition [J]. 中国物理快报, 2006, 23(2): 467-469.
[14]
ZHU Xue-Liang;GUO Li-Wei;YU Nai-Sen;PENG Ming-Zeng;YAN Jian-Feng;GE Bing-Hui;JIA Hai-Qiang;
CHEN Hong;ZHOU Jun-Ming. Characteristics of High In-Content InGaN Alloys Grown by MOCVD [J]. 中国物理快报, 2006, 23(12): 3369-3372.
[15]
FEI Chun-Hong;PENG Zeng-Hui;LV Feng-Zhen;ZHANG Ling-Li;YAO Li-Shuang;XUAN Li. Effect of Molecular Weight on Liquid Crystal Photoalignment by Photosensitive Polyester Containing Thrifluoromethyl Moieties [J]. 中国物理快报, 2006, 23(11): 3029-3032.