Photoconductivity Characteristics of Porous Silicon
LIU Kaifeng, WENG Yumin, ZHU Lei* , WANG Shenyi* , ZONG Xiangfu
Department of Material Science, Fudan University, Shanghai 200433
* Department of Physics, Fudan University, Shanghai 200433
Photoconductivity Characteristics of Porous Silicon
LIU Kaifeng;WENG Yumin;ZHU Lei* ;WANG Shenyi* ;ZONG Xiangfu
Department of Material Science, Fudan University, Shanghai 200433
* Department of Physics, Fudan University, Shanghai 200433
关键词 ：
72.80.-r ,
72.20.Jv
Abstract ： The highly photo-sensitive characteristics of porous silicon (PS) were observed. The transient behaviors of photoconductivity in horizontal and perpendicular directions of PS surface were very different, though both of them include two decay components. The photoconduction spectra at room temperature and 14.5K show that characteristics of PS are different from those of silicon substrate. The difference may be attributed to quantum confinement effect in nano-size microstructures of PS.
Key words ：
72.80.-r
72.20.Jv
出版日期: 1994-05-01
:
72.80.-r
(Conductivity of specific materials)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
引用本文:
LIU Kaifeng;WENG Yumin;ZHU Lei*;WANG Shenyi*;ZONG Xiangfu. Photoconductivity Characteristics of Porous Silicon[J]. 中国物理快报, 1994, 11(5): 289-292.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I5/289
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