Effects of H+ -Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)
TIAN Renhe
Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875
Effects of H+ -Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)
TIAN Renhe
Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875
关键词 ：
61.70.At ,
61.70.Sk ,
61.80.-x
Abstract ： By using the plan-view transmission electron microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering (and channeling) spectrometry technology, the effects of H+ -implantation on the formation of secondary defects in self-implanted Si(100) were investigated. Experiments indicate that the H+ -implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).
Key words ：
61.70.At
61.70.Sk
61.80.-x
出版日期: 1993-05-01
引用本文:
TIAN Renhe. Effects of H+ -Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)[J]. 中国物理快报, 1993, 10(5): 294-297.
+ -Implantation on the Formation of Secondary Defects in Self-Implanted Si(100). Chin. Phys. Lett., 1993, 10(5): 294-297.
链接本文:
https://cpl.iphy.ac.cn/CN/
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https://cpl.iphy.ac.cn/CN/Y1993/V10/I5/294
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1993, Vol. 10 
