Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate
QIAN Yujun, PAN Bailiang, YAO Zhixin
Department of Physics, Zhejiang University, Hangzhou 310027
Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate
QIAN Yujun;PAN Bailiang;YAO Zhixin
Department of Physics, Zhejiang University, Hangzhou 310027
关键词 ：
61.80.-x ,
61.70.Sk ,
73.40.-c
Abstract ： In this paper we report the experimental results of copper vapor laser-induced B-doping in Si-substrate. The laser doped p-n junctions have depths less than 0.2μm and surface B concentrations more than 1021 cm-3 . The highest photoelectric efficiency of solar cell reaches 9.2%. It shows that copper vapor laser has the distinguished advantage in laser-induced doping.
Key words ：
61.80.-x
61.70.Sk
73.40.-c
出版日期: 1995-10-01
:
61.80.-x
(Physical radiation effects, radiation damage)
61.70.Sk
73.40.-c
(Electronic transport in interface structures)
引用本文:
QIAN Yujun;PAN Bailiang;YAO Zhixin. Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate[J]. 中国物理快报, 1995, 12(10): 605-608.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I10/605
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1995, Vol. 12 
