High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy
PAN Zhong, LI Lian-He, DU Yun, LIN Yao-Wang, WU Rong-Han
State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083
High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy
PAN Zhong;LI Lian-He;DU Yun;LIN Yao-Wang;WU Rong-Han
State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 :
68.55.Bd ,
78.55.Cr ,
78.65.Fa ,
61.70.At
Abstract : GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made dc-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57μm at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850°C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850°C was obtained. The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20°C-75°C.
Key words :
68.55.Bd
78.55.Cr
78.65.Fa
61.70.At
出版日期: 2001-05-01
引用本文:
PAN Zhong;LI Lian-He;DU Yun;LIN Yao-Wang;WU Rong-Han. High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy[J]. 中国物理快报, 2001, 18(5): 659-661.
PAN Zhong, LI Lian-He, DU Yun, LIN Yao-Wang, WU Rong-Han. High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy. Chin. Phys. Lett., 2001, 18(5): 659-661.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I5/659
[1]
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing [J]. 中国物理快报, 2006, 23(9): 2579-2582.
[2]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching [J]. 中国物理快报, 2006, 23(8): 2243-2246.
[3]
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35 Ga0.65 As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates [J]. 中国物理快报, 2006, 23(5): 1310-1313.
[4]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy [J]. 中国物理快报, 2006, 23(4): 1005-1008.
[5]
HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure [J]. 中国物理快报, 2005, 22(8): 2096-2099.
[6]
ZHAO Qian;PAN Jiao-Qing;ZHOU Fan;WANG Bao-Jun;WANG Lu-Feng;WANG Wei. A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth [J]. 中国物理快报, 2005, 22(8): 2016-2019.
[7]
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun. Optical Properties of Phase-Separated GaN1-x Px Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition [J]. 中国物理快报, 2005, 22(8): 2081-2083.
[8]
LÜWei;LI Da-Bing;LI Chao-Rong;CHEN Gang;ZHANG Ze. Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of Inx Ga1-x N/GaN Multiple Quantum Wells [J]. 中国物理快报, 2005, 22(4): 971-974.
[9]
WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source [J]. 中国物理快报, 2005, 22(4): 960-962.
[10]
CHEN Guang-De; ZHU You-Zhang;YAN Guo-Jun;YUAN Jin-She;K. H. Kim;J. Y. Lin;H. X. Jiang. Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys [J]. 中国物理快报, 2005, 22(2): 472-474.
[11]
LIU Yong-Hui;KONG Xiao-Jun. Exciton and Biexciton Binding Energies in Rectangular Quantum Dots [J]. 中国物理快报, 2005, 22(11): 2963-2965.
[12]
LI Yao-Yi;CHENG Mu-Tian;ZHOU Hui-Jun;LIU Shao-Ding;WANG Qu-Quan. Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot [J]. 中国物理快报, 2005, 22(11): 2960-2962.
[13]
LU Yi-Jun;GAO Yu-Lin;ZHENG Jian-Sheng;ZHANG Yong;MASCARENHAS A.;XIN H.P.;TU C. W.. Direct Observation of NN Pairs Transfer in GaP1-x Nx (x =0.12%) [J]. 中国物理快报, 2005, 22(11): 2957-2959.
[14]
LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates [J]. 中国物理快报, 2005, 22(10): 2692-2695.
[15]
XU Xiao-Hua;NIU Zhi-Chuan;NI Hai-Qiao;XU Ying-Qiang;ZHANG Wei;HE Zheng-Hong;HAN Qin;WU Rong-Han. Molecular Beam Epitaxy Growth and Photoluminescence of Type-II (GaAs1-x Sbx /Iny Ga1-y As)/GaAs Bilayer Quantum Well [J]. 中国物理快报, 2004, 21(9): 1831-1834.