Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates
LIANG Song, ZHU Hong-Liang, PAN Jiao-Qing, ZHAO Ling-Juan, WANG Wei
National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates
LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei
National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
78.67.Hc ,
78.55.Cr ,
68.65.Hb
Abstract ： Thermal annealing effect on InAs quantum dots grown on vicinal (100) GaAs substrates is studied in comparison with dots on exact (100) GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.
Key words ：
78.67.Hc
78.55.Cr
68.65.Hb
出版日期: 2005-10-01
引用本文:
LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates[J]. 中国物理快报, 2005, 22(10): 2692-2695.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I10/2692
[1]
LIAO Wen-Hu;GAO Qin-Xiang;ZHOU Guang-Hui;. Photon-Assisted Conductance Structure for a Quantum Dot
[2]
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing
[3]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[4]
QIAN Bo;CHEN San;CEN Zhan-Hong;CHEN Kun-Ji;LIU Yan-Song;XU Jun;MA Zhong-Yuan;LI Wei;HUANG Xin-Fan. Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx :H Multilayer for Active Layer in Microcavities
[5]
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35 Ga0.65 As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates
[6]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
[7]
LU Yan-Wu;CAI Lin;LIANG Shuang. Strained and Piezoelectric Characteristics of Nitride Quantum Dots
[8]
ZHENG Jia-Jin;ZHANG Gui-Lan;GUO Yang-Xue;WANG Xiao-Yan;CHEN Wen-Ju;ZHANG Xiao-Song;HUA Yu-Lin. Two-Photon Absorption Properties of Mn-Doped ZnS Quantum Dots
[9]
SHAN Shao-Tai;XIA Lei;DING Ding;DONG Yuan-Da. Thermal Stability and Kinetics of Binary Cu65 Hf35 Bulk Metallic Glass
[10]
HAO Zhong-Hua;GONG Hong-Mei;HAN Jun-Bo;ZHAI Yue-Ying;WANG Qu-Quan;. One- and Two-Photon Excited Fluorescence of CdSe and CdSe/ZnS Quantum Dots in n-Hexane
[11]
SUN Lian-Liang;LI Shu-Shen. Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials: the Effect of Electric Fields
[12]
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun. Optical Properties of Phase-Separated GaN1-x Px Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
[13]
HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure
[14]
ZHAO Qian;PAN Jiao-Qing;ZHOU Fan;WANG Bao-Jun;WANG Lu-Feng;WANG Wei. A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
[15]
DENG Ning;ZHANG Lei;CHEN Pei-Yi. Investigation of Composition in Nano-Scaled Self-Assembled SiGe Islands
2005, Vol. 22 
