GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 μm
PAN Zhong1, LI Lian-He1, XU Ying-Qiang1, ZHANG Wei1, LIN Yao-Wang1, ZHANG Rui-Kang2, ZHONG Yuan2, REN Xiao-Min2
1Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
2Beijing University of Post and Telecom, P. O. Box 66, Beijing 100876
GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 μm
PAN Zhong1;LI Lian-He1;XU Ying-Qiang1;ZHANG Wei1;LIN Yao-Wang1;ZHANG Rui-Kang2;ZHONG Yuan2;REN Xiao-Min2
1Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
2Beijing University of Post and Telecom, P. O. Box 66, Beijing 100876
Abstract： A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at wavelength of 1.3 μm with the full-width at half-maximum of 4 nm was demonstrated. The GaInNAs RCE-PD was grown by molecular-beam epitaxy using a home-made ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100 μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.
2001, Vol. 18 
