optical, Structural and Laser-Induced Damage Threshold Properties of HfO2 Thin Films Prepared by Electron Beam Evaporation
ZHAN Mei-Qiong, Zhang Dong-Ping, TAN Tian-Ya, HE Hong-Bo, SHAO Jian-Da, FAN Zheng-Xiu
R&D Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
optical, Structural and Laser-Induced Damage Threshold Properties of HfO2 Thin Films Prepared by Electron Beam Evaporation
ZHAN Mei-Qiong;Zhang Dong-Ping;TAN Tian-Ya;HE Hong-Bo;SHAO Jian-Da;FAN Zheng-Xiu
R&D Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
关键词 ：
78.20.Ci ,
61.80.-x ,
42.79.Wc
Abstract ： We prepare HfO2 thin films by electron beam evaporation technology. The samples are annealed in air after deposition. With increasing annealing temperature, it is found that the absorption of the samples decreases firstly and then increases. Also, the laser-induced damage threshold (LIDT) increases firstly and then decreases. When annealing temperature is 473K, the sample has the highest LIDT of 2.17J/cm2 , and the lowest absorption of 18ppm. By investigating the optical and structural characteristics and their relations to LIDT, it is shown that the principal factor dominating the LIDT is absorption.
Key words ：
78.20.Ci
61.80.-x
42.79.Wc
出版日期: 2005-05-01
:
78.20.Ci
(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
61.80.-x
(Physical radiation effects, radiation damage)
42.79.Wc
(Optical coatings)
引用本文:
ZHAN Mei-Qiong;Zhang Dong-Ping;TAN Tian-Ya;HE Hong-Bo;SHAO Jian-Da;FAN Zheng-Xiu. optical, Structural and Laser-Induced Damage Threshold Properties of HfO2 Thin Films Prepared by Electron Beam Evaporation[J]. 中国物理快报, 2005, 22(5): 1246-1248.
2 Thin Films Prepared by Electron Beam Evaporation. Chin. Phys. Lett., 2005, 22(5): 1246-1248.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I5/1246
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2005, Vol. 22 
