Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates
XIAO Guangming* , YIN Shiduan* , ZHANG Jingping* , DING Aiju, DONG Aihua, ZHU Peiran, ZHOU Junming, LIU Jiarui
* Institute of Semiconductors, Academia Sinica, Beijing 100083
Institute of Physics, Academia Sinica, Beijing 100080
Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates
XIAO Guangming* ;YIN Shiduan* ;ZHANG Jingping* ;DING Aiju;DONG Aihua;ZHU Peiran;ZHOU Junming;LIU Jiarui
* Institute of Semiconductors, Academia Sinica, Beijing 100083
Institute of Physics, Academia Sinica, Beijing 100080
关键词 ：
61.70.At ,
81.10.Jt
Abstract ： GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25μm on Si have been implanted with Si ions at 1.2MeV to dose of 1x1015 /cm2 . A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2MeV. The experimental result show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.
Key words ：
61.70.At
81.10.Jt
出版日期: 1991-03-01
:
61.70.At
81.10.Jt
(Growth from solid phases (including multiphase diffusion and recrystallization))
引用本文:
XIAO Guangming*;YIN Shiduan*;ZHANG Jingping*;DING Aiju;DONG Aihua;ZHU Peiran;ZHOU Junming;LIU Jiarui. Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates[J]. 中国物理快报, 1991, 8(3): 149-152.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I3/149
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