Growth of Silicon Nanowires by Heating Si Substrate
XING Ying-Jie1 , XI Zhong-He1 , YU Da-Peng2 , HANG Qing-Ling2 , YAN Han-Fei2 , FENG Sun-Qi2 , XUE Zeng-Quan1
1 Department of Electronics, Peking University, Beijing 100871
2 Department of Physics, Peking University, Beijing 100871
Growth of Silicon Nanowires by Heating Si Substrate
XING Ying-Jie1 ;XI Zhong-He1 ;YU Da-Peng2 ;HANG Qing-Ling2 ;YAN Han-Fei2 ;FENG Sun-Qi2 ;XUE Zeng-Quan1
1 Department of Electronics, Peking University, Beijing 100871
2 Department of Physics, Peking University, Beijing 100871
关键词 ：
61.46.+w ,
81.10.Jt
Abstract ： Amorphous silicon nanowires were prepared by heating Si substrate at high temperature using an Ni (or Au) catalyst. The nanowires have a diameter of 10 - 40 nm and a length up to several tens of micrometers. Different from the well-known vapor-liquid-solid mechanism, a solid-liquid-solid mechanism appeared to control the nanowire growth. The heating process had strong influence on the growth of silicon nanowires. It was found that ambient gas was necessary to grow nanowire. This method can be used to prepare other kinds of nanowires.
Key words ：
61.46.+w
81.10.Jt
出版日期: 2002-02-01
:
61.46.+w
81.10.Jt
(Growth from solid phases (including multiphase diffusion and recrystallization))
引用本文:
XING Ying-Jie;XI Zhong-He;YU Da-Peng;HANG Qing-Ling;YAN Han-Fei;FENG Sun-Qi;XUE Zeng-Quan. Growth of Silicon Nanowires by Heating Si Substrate[J]. 中国物理快报, 2002, 19(2): 240-242.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I2/240
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